APTM20DAM05G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw
Case: SP6C
Topology: boost chopper
Drain-source voltage: 200V
Drain current: 237A
On-state resistance: 6mΩ
Power dissipation: 1136W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Pulsed drain current: 1268A
Semiconductor structure: diode/transistor
кількість в упаковці: 1 шт
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Технічний опис APTM20DAM05G MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 200V 317A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 317A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V, Power Dissipation (Max): 1136W (Tc), Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V.
Інші пропозиції APTM20DAM05G
| Фото | Назва | Виробник | Інформація |
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APTM20DAM05G | Виробник : Microchip Technology |
Description: MOSFET N-CH 200V 317A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 317A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V Power Dissipation (Max): 1136W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V |
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| APTM20DAM05G | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - Mosfet |
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| APTM20DAM05G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 237A; SP6C; Idm: 1268A; 1136W; screw Case: SP6C Topology: boost chopper Drain-source voltage: 200V Drain current: 237A On-state resistance: 6mΩ Power dissipation: 1136W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Pulsed drain current: 1268A Semiconductor structure: diode/transistor |
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