APTM20DUM05G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 200V; 237A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 200V
Drain current: 237A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 6mΩ
Pulsed drain current: 1268A
Power dissipation: 1136W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис APTM20DUM05G MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; transistor/transistor,common source; 200V; 237A; SP6C, Type of module: MOSFET transistor, Semiconductor structure: common source; transistor/transistor, Drain-source voltage: 200V, Drain current: 237A, Case: SP6C, Topology: MOSFET x2, Electrical mounting: FASTON connectors; screw, On-state resistance: 6mΩ, Pulsed drain current: 1268A, Power dissipation: 1136W, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції APTM20DUM05G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTM20DUM05G | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 200V 317A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1136W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 |
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| APTM20DUM05G | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC6046 |
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| APTM20DUM05G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor,common source; 200V; 237A; SP6C Type of module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 237A Case: SP6C Topology: MOSFET x2 Electrical mounting: FASTON connectors; screw On-state resistance: 6mΩ Pulsed drain current: 1268A Power dissipation: 1136W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |