APTM20UM03FAG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW
Technology: FREDFET; POWER MOS 7®
Drain-source voltage: 200V
Drain current: 434A
Pulsed drain current: 2320A
Power dissipation: 2.27kW
Case: SP6C
Gate-source voltage: ±30V
On-state resistance: 3.6mΩ
Semiconductor structure: diode/transistor
Electrical mounting: FASTON connectors; screw
Topology: single transistor + series diode - parrallel diode
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
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Технічний опис APTM20UM03FAG MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 200V 580A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 580A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V, Power Dissipation (Max): 2270W (Tc), Vgs(th) (Max) @ Id: 5V @ 15mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V.
Інші пропозиції APTM20UM03FAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| APTM20UM03FAG | Виробник : MICROSEMI |
SP6/580 A, 200 V, 0.0036 ohm, N-CHANNEL, Si, POWER,MOSFET APTM20 кількість в упаковці: 1 шт |
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APTM20UM03FAG | Виробник : Microchip Technology |
Description: MOSFET N-CH 200V 580A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 580A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V Power Dissipation (Max): 2270W (Tc) Vgs(th) (Max) @ Id: 5V @ 15mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 840 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 43300 pF @ 25 V |
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| APTM20UM03FAG | Виробник : Microchip / Microsemi |
Discrete Semiconductor Modules CC6049 |
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| APTM20UM03FAG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 434A; SP6C; Idm: 2320A; 2.27kW Technology: FREDFET; POWER MOS 7® Drain-source voltage: 200V Drain current: 434A Pulsed drain current: 2320A Power dissipation: 2.27kW Case: SP6C Gate-source voltage: ±30V On-state resistance: 3.6mΩ Semiconductor structure: diode/transistor Electrical mounting: FASTON connectors; screw Topology: single transistor + series diode - parrallel diode Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |