AS4C2M32S-6BIN Alliance Memory, Inc.
Виробник: Alliance Memory, Inc.Description: IC DRAM 64MBIT PARALLEL 90TFBGA
Packaging: Tray
Package / Case: 90-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 90-TFBGA (8x13)
Part Status: Active
Write Cycle Time - Word, Page: 2ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 2M x 32
DigiKey Programmable: Not Verified
на замовлення 946 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 417.42 грн |
| 10+ | 366.77 грн |
| 25+ | 359.73 грн |
| 40+ | 335.16 грн |
| 190+ | 300.74 грн |
| 380+ | 299.61 грн |
| 570+ | 276.2 грн |
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Технічний опис AS4C2M32S-6BIN Alliance Memory, Inc.
Description: IC DRAM 64MBIT PARALLEL 90TFBGA, Packaging: Tray, Package / Case: 90-TFBGA, Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SDRAM, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 90-TFBGA (8x13), Part Status: Active, Write Cycle Time - Word, Page: 2ns, Memory Interface: Parallel, Access Time: 5.4 ns, Memory Organization: 2M x 32, DigiKey Programmable: Not Verified.
Інші пропозиції AS4C2M32S-6BIN
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AS4C2M32S-6BIN | Виробник : Alliance Memory |
DRAM 64M, 3.3V, 2M x 32 SDRAM |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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| AS4C2M32S-6BIN | Виробник : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx32bit; 3.3V; 166MHz; 5.4ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bit Clock frequency: 166MHz Access time: 5.4ns Case: TFBGA90 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
товар відсутній |
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| AS4C2M32S-6BIN | Виробник : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx32bit; 3.3V; 166MHz; 5.4ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bit Clock frequency: 166MHz Access time: 5.4ns Case: TFBGA90 Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
товар відсутній |