AS4C32M16MD1A-5BCNTR ALLIANCE MEMORY
Виробник: ALLIANCE MEMORYCategory: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -30÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of package: reel
Operating voltage: 1.8V
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Технічний опис AS4C32M16MD1A-5BCNTR ALLIANCE MEMORY
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -30÷85°C, Type of integrated circuit: DRAM memory, Kind of memory: DDR1; SDRAM, Memory organisation: 32Mx16bit, Clock frequency: 200MHz, Access time: 15ns, Case: FPBGA60, Memory capacity: 512Mb, Mounting: SMD, Operating temperature: -30...85°C, Kind of package: reel, Operating voltage: 1.8V.
Інші пропозиції AS4C32M16MD1A-5BCNTR
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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AS4C32M16MD1A-5BCNTR | Виробник : Alliance Memory, Inc. |
Description: IC DRAM 512M PARALLEL 60FBGA |
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| AS4C32M16MD1A-5BCNTR | Виробник : Alliance Memory |
DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16 |
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| AS4C32M16MD1A-5BCNTR | Виробник : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -30÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx16bit Clock frequency: 200MHz Access time: 15ns Case: FPBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -30...85°C Kind of package: reel Operating voltage: 1.8V |
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