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AS4C32M16SB-6TINTR

AS4C32M16SB-6TINTR ALLIANCE MEMORY


Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
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Технічний опис AS4C32M16SB-6TINTR ALLIANCE MEMORY

Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory organisation: 8Mx16bitx4, Clock frequency: 166MHz, Access time: 5ns, Case: TSOP54 II, Memory capacity: 512Mb, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: reel, Operating voltage: 3.3V.

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AS4C32M16SB-6TINTR Виробник : Alliance Memory 512M%20SDRAM_%20B%20die_AS4C32M16SB-7TCN-7TIN-6TIN_Rev%201-1265391.pdf DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
товар відсутній
AS4C32M16SB-6TINTR AS4C32M16SB-6TINTR Виробник : ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній