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AS4C4M32MSA-6BIN ALLIANCE MEMORY


20171206_AllianceMemory_128M_LPSDRAM_AS4C4M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
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Технічний опис AS4C4M32MSA-6BIN ALLIANCE MEMORY

Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C, Case: FBGA90, Operating temperature: -40...85°C, Mounting: SMD, Access time: 5.5ns, Kind of package: in-tray, Kind of memory: DDR1; SDRAM, Kind of interface: parallel, Memory capacity: 128Mb, Clock frequency: 166MHz, Operating voltage: 1.7V, Type of integrated circuit: DRAM memory, Memory organisation: 4Mx32bit.

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AS4C4M32MSA-6BIN AS4C4M32MSA-6BIN Виробник : Alliance Memory, Inc. 20171206_AllianceMemory_128M_LPSDRAM_AS4C4M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Description: IC DRAM 128MBIT PARALLEL 90FBGA
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AS4C4M32MSA-6BIN AS4C4M32MSA-6BIN Виробник : Alliance Memory 20171206_AllianceMemory_128M_LPSDRAM_AS4C4M32MSA-6-1282179.pdf DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT
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AS4C4M32MSA-6BIN Виробник : ALLIANCE MEMORY 20171206_AllianceMemory_128M_LPSDRAM_AS4C4M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
товар відсутній