AUIRF4905STRL INFINEON
Виробник: INFINEONDescription: INFINEON - AUIRF4905STRL - Leistungs-MOSFET, p-Kanal, 55 V, 42 A, 0.02 ohm, TO-263AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 55V
rohsCompliant: YES
Dauer-Drainstrom Id: 42A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 170W
Bauform - Transistor: TO-263AB
Anzahl der Pins: 3Pin(s)
Produktpalette: HEXFET Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.02ohm
SVHC: No SVHC (08-Jul-2021)
на замовлення 7676 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 367.76 грн |
| 100+ | 314.15 грн |
| 500+ | 254.54 грн |
| 1000+ | 230.43 грн |
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Технічний опис AUIRF4905STRL INFINEON
Description: MOSFET P-CH 55V 42A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO263-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції AUIRF4905STRL за ціною від 230.43 грн до 508.98 грн
| Фото | Назва | Виробник | Інформація |
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AUIRF4905STRL | Виробник : INFINEON |
Description: INFINEON - AUIRF4905STRL - Leistungs-MOSFET, p-Kanal, 55 V, 42 A, 0.02 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 42A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 170W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: No SVHC (08-Jul-2021) |
на замовлення 7676 шт: термін постачання 21-31 дні (днів) |
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AUIRF4905STRL Код товару: 178037 |
Транзистори > Польові P-канальні |
товар відсутній
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AUIRF4905STRL | Виробник : Infineon Technologies |
Trans MOSFET P-CH Si 55V 70A Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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AUIRF4905STRL | Виробник : Infineon Technologies |
Description: MOSFET P-CH 55V 42A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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AUIRF4905STRL | Виробник : Infineon Technologies |
Description: MOSFET P-CH 55V 42A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |