AUIRF7309QTR Infineon Technologies
на замовлення 3399 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.45 грн |
| 10+ | 131.29 грн |
| 100+ | 91.46 грн |
| 250+ | 84.12 грн |
| 500+ | 76.11 грн |
| 1000+ | 65.83 грн |
| 2500+ | 62.02 грн |
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Технічний опис AUIRF7309QTR Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, 3A, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Last Time Buy.
Інші пропозиції AUIRF7309QTR
| Фото | Назва | Виробник | Інформація |
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AUIRF7309QTR | Виробник : Infineon Technologies |
 Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R |
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| AUIRF7309QTR | Виробник : Infineon Technologies |
Trans MOSFET N/P-CH 30V 4A/3A Automotive 8-Pin SOIC T/R |
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AUIRF7309QTR | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Case: SO8 Gate charge: 16.7nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Drain-source voltage: 30/-30V Drain current: 4/-3A On-state resistance: 0.05/0.1Ω Type of transistor: N/P-MOSFET Power dissipation: 1.4W Polarisation: unipolar кількість в упаковці: 4000 шт |
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AUIRF7309QTR | Виробник : Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy |
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AUIRF7309QTR | Виробник : Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy |
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AUIRF7309QTR | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Case: SO8 Gate charge: 16.7nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Drain-source voltage: 30/-30V Drain current: 4/-3A On-state resistance: 0.05/0.1Ω Type of transistor: N/P-MOSFET Power dissipation: 1.4W Polarisation: unipolar |
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