AUIRFN7110TR

AUIRFN7110TR Infineon Technologies


auirfn7110.pdf?fileId=5546d462533600a4015355b1638a1438 Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 58A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 44000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
231+86.69 грн
Мінімальне замовлення: 231
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Технічний опис AUIRFN7110TR Infineon Technologies

Description: MOSFET N-CH 100V 58A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V, Power Dissipation (Max): 4.3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: 8-PQFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V, Qualification: AEC-Q101.

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AUIRFN7110TR AUIRFN7110TR Виробник : Infineon Technologies auirfn7110.pdf?fileId=5546d462533600a4015355b1638a1438 Description: MOSFET N-CH 100V 58A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
AUIRFN7110TR AUIRFN7110TR Виробник : Infineon Technologies auirfn7110-1226099.pdf MOSFET N-CHANNEL 75 / 80
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