B1D10065E BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 50W
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 1.75V
Leakage current: 20µA
кількість в упаковці: 1 шт
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Технічний опис B1D10065E BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 10A, Power dissipation: 50W, Semiconductor structure: single diode, Case: TO252-2, Kind of package: reel; tape, Max. forward impulse current: 75A, Max. forward voltage: 1.75V, Leakage current: 20µA, кількість в упаковці: 1 шт.
Інші пропозиції B1D10065E
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B1D10065E | Виробник : BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Power dissipation: 50W Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 75A Max. forward voltage: 1.75V Leakage current: 20µA |
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