Технічний опис BC850C-QR NEXPERIA
Description: BC850C-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 250 mW, Qualification: AEC-Q101.
Інші пропозиції BC850C-QR
| Фото | Назва | Виробник | Інформація |
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BC850C-QR | Виробник : Nexperia |
 Trans GP BJT NPN 45V 0.1A 250mW Automotive 3-Pin SOT-23 T/R |
товар відсутній |
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BC850C-QR | Виробник : Nexperia USA Inc. |
Description: BC850C-Q/SOT23/TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q101 |
товар відсутній |
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BC850C-QR | Виробник : Nexperia |
Bipolar Transistors - BJT SOT23 45V .1A NPN GP TRANS |
товар відсутній |