BC856BQBZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 340 mW
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 15.81 грн |
| 27+ | 10.38 грн |
| 100+ | 5.06 грн |
| 500+ | 3.97 грн |
| 1000+ | 2.76 грн |
| 2000+ | 2.39 грн |
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Технічний опис BC856BQBZ Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR IN DFN PACK, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1110D-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 340 mW.
Інші пропозиції BC856BQBZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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BC856BQBZ | Виробник : Nexperia |
Trans GP BJT PNP 65V 0.1A 420mW 3-Pin DFN-D T/R |
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| BC856BQBZ | Виробник : Nexperia USA Inc. |
Description: SMALL SIGNAL BIPOLAR IN DFN PACK Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1110D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 340 mW |
товар відсутній |
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BC856BQBZ | Виробник : Nexperia |
Bipolar Transistors - BJT BC856BQB/SOT8015/DFN1110D-3 |
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