BC857BQBZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: TRANS 45V 0.1A DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
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Технічний опис BC857BQBZ Nexperia USA Inc.
Description: TRANS 45V 0.1A DFN1110D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Supplier Device Package: DFN1110D-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 340 mW.
Інші пропозиції BC857BQBZ
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BC857BQBZ | Виробник : Nexperia USA Inc. |
Description: TRANS 45V 0.1A DFN1110D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: DFN1110D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW |
товар відсутній |
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BC857BQBZ | Виробник : Nexperia |
Bipolar Transistors - BJT BC857BQB/SOT8015/DFN1110D-3 |
товар відсутній |