Технічний опис BCM856BSF NEXPERIA
Description: BCM856BS/SOT363/SC-88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: 6-TSSOP, Grade: Automotive, Qualification: AEC-Q100.
Інші пропозиції BCM856BSF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BCM856BSF | Виробник : NXP Semiconductors |
 Trans GP BJT PNP 65V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R |
товар відсутній |
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BCM856BSF | Виробник : Nexperia |
Trans GP BJT PNP 65V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R |
товар відсутній |
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BCM856BSF | Виробник : Nexperia USA Inc. |
Description: BCM856BS/SOT363/SC-88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
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BCM856BSF | Виробник : Nexperia |
Bipolar Transistors - BJT BCM856BS/SOT363/SC-88 |
товар відсутній |