Продукція > NEXPERIA > BCM856BSH-QF

BCM856BSH-QF NEXPERIA


bcm856bsh-q.pdf Виробник: NEXPERIA
Trans GP BJT PNP 65V 0.1A 400mW Automotive 6-Pin TSSOP T/R
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис BCM856BSH-QF NEXPERIA

Description: BCM856BSH-QF, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 175MHz, Supplier Device Package: 6-TSSOP, Grade: Automotive, Qualification: AEC-Q101.

Інші пропозиції BCM856BSH-QF

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
BCM856BSH-QF BCM856BSH-QF Виробник : Nexperia USA Inc. BCM856BSH-Q.pdf Description: BCM856BSH-QF
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BCM856BSH-QF BCM856BSH-QF Виробник : Nexperia BCM856BSH-Q.pdf Bipolar Transistors - BJT BCM856BSH-Q/SOT363/SC-88
товар відсутній