Технічний опис BCW89 ON Semiconductor
Description: TRANS PNP 60V 0.5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 350 mW.
Інші пропозиції BCW89
| Фото | Назва | Виробник | Інформація |
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| BCW89 | Виробник : ON Semiconductor |
 Trans GP BJT PNP 60V 0.5A 350mW 3-Pin SOT-23 T/R |
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BCW89 | Виробник : CDIL |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.1A; 250mW; SOT23-3 Mounting: SMD Case: SOT23-3 Kind of package: reel; tape Power dissipation: 0.25W Polarisation: bipolar Pulsed collector current: 0.2A Type of transistor: PNP Current gain: 120...260 Frequency: 150MHz Collector current: 0.1A Collector-emitter voltage: 60V кількість в упаковці: 25 шт |
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BCW89 | Виробник : onsemi |
Description: TRANS PNP 60V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 350 mW |
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BCW89 | Виробник : onsemi |
Description: TRANS PNP 60V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 350 mW |
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| BCW89 | Виробник : Fairchild Semiconductor |
Description: TRANS PNP 60V 0.5A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 350 mW |
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BCW89 | Виробник : onsemi / Fairchild |
Bipolar Transistors - BJT SOT-23 PNP GP AMP |
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BCW89 | Виробник : CDIL |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.1A; 250mW; SOT23-3 Mounting: SMD Case: SOT23-3 Kind of package: reel; tape Power dissipation: 0.25W Polarisation: bipolar Pulsed collector current: 0.2A Type of transistor: PNP Current gain: 120...260 Frequency: 150MHz Collector current: 0.1A Collector-emitter voltage: 60V |
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