Технічний опис BF199-J35Z ON Semiconductor
Description: RF TRANS NPN 25V 1.1GHZ TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 350mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 25V, DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V, Frequency - Transition: 1.1GHz, Supplier Device Package: TO-92-3, Part Status: Obsolete.
Інші пропозиції BF199-J35Z
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
BF199_J35Z | Виробник : onsemi |
 Description: RF TRANS NPN 25V 1.1GHZ TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 25V DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V Frequency - Transition: 1.1GHz Supplier Device Package: TO-92-3 Part Status: Obsolete |
товар відсутній |