Технічний опис BFR520T,115 NXP Semiconductors
Description: RF TRANS NPN 15V 9GHZ SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 150mW, Current - Collector (Ic) (Max): 70mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz, Supplier Device Package: SC-75, Part Status: Obsolete.
Інші пропозиції BFR520T,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
BFR520T,115 | Виробник : NXP USA Inc. |
 Description: RF TRANS NPN 15V 9GHZ SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Supplier Device Package: SC-75 Part Status: Obsolete |
товар відсутній |
|
|
|
BFR520T,115 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Supplier Device Package: SC-75 Part Status: Obsolete |
товар відсутній |
|
 |
BFR520T,115 | Виробник : NXP Semiconductors |
RF Bipolar Transistors NPN 20V 70mA 9GHZ |
товар відсутній |
|
| BFR520T,115 | Виробник : onsemi / Fairchild |
Bipolar Transistors - BJT |
товар відсутній |