Технічний опис BFR540,235 NXP Semiconductors
Description: RF TRANS NPN 15V 9GHZ TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Power - Max: 500mW, Current - Collector (Ic) (Max): 120mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz, Supplier Device Package: SOT-23 (TO-236AB).
Інші пропозиції BFR540,235
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BFR540,235 | Виробник : NXP USA Inc. |
 Description: RF TRANS NPN 15V 9GHZ TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 120mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz Supplier Device Package: SOT-23 (TO-236AB) |
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BFR540,235 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 120mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz Supplier Device Package: SOT-23 (TO-236AB) |
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BFR540,235 | Виробник : NXP Semiconductors |
RF Bipolar Transistors Single NPN 15V 120mA 500mW 100 9GHz |
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