BS108G ON Semiconductor

Description: MOSFET N-CH 200V 250MA TO92-3, Packaging: Tube, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 2.8V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2V, 2.8V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.