Технічний опис BS170RLRAG ON
Description: MOSFET N-CH 60V 500MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V.
Інші пропозиції BS170RLRAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BS170RLRAG | Виробник : ON | N/A |
на замовлення 197 шт: термін постачання 14-28 дні (днів) |
||
| BS170RLRAG | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R |
товар відсутній |
||
 |
BS170RLRAG | Виробник : ON Semiconductor |
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 T/R |
товар відсутній |
|
 |
BS170RLRAG | Виробник : onsemi |
Description: MOSFET N-CH 60V 500MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
товар відсутній |
|
|
|
BS170RLRAG | Виробник : onsemi |
Description: MOSFET N-CH 60V 500MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
товар відсутній |