Технічний опис BSM50GP120BOSA1 Infineon Technologies
Description: IGBT MODULE 1200V 50A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: 3 Phase Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 3.3 pF @ 25 V.
Інші пропозиції BSM50GP120BOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BSM50GP120BOSA1 | Виробник : Infineon Technologies |
 LOW POWER ECONO |
товар відсутній |
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BSM50GP120BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MODULE 1200V 50A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: 3 Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 3.3 pF @ 25 V |
товар відсутній |
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| BSM50GP120BOSA1 | Виробник : Infineon Technologies |
IGBT Modules LOW POWER ECONO |
товар відсутній |