на замовлення 5000 шт:
термін постачання 940-949 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 116.25 грн |
10+ | 100.83 грн |
100+ | 71.08 грн |
500+ | 57.92 грн |
1000+ | 46.96 грн |
2500+ | 45.97 грн |
5000+ | 43.44 грн |
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Технічний опис BSZ017NE2LS5IATMA1 Infineon Technologies
Description: MOSFET N-CH 25V 27A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V.
Інші пропозиції BSZ017NE2LS5IATMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BSZ017NE2LS5IATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 25V 27A/40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V |
товар відсутній |
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BSZ017NE2LS5IATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 25V 27A/40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V |
товар відсутній |