BUK6607-55C,118 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 55V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 71.08 грн |
| 1600+ | 58.07 грн |
| 2400+ | 55.17 грн |
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Технічний опис BUK6607-55C,118 Nexperia USA Inc.
Description: MOSFET N-CH 55V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V, Power Dissipation (Max): 158W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: D2PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK6607-55C,118 за ціною від 63.34 грн до 146.41 грн
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BUK6607-55C,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6171 шт: термін постачання 21-31 дні (днів) |
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BUK6607-55C,118 | Виробник : Nexperia |
MOSFET BUK6607-55C/SOT404/D2PAK |
на замовлення 5091 шт: термін постачання 21-30 дні (днів) |
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BUK6607-55C,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 420A; 158W Mounting: SMD Application: automotive industry Power dissipation: 158W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: logic level Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±15V Pulsed drain current: 420A Case: D2PAK; SOT404 Drain-source voltage: 55V Drain current: 74A On-state resistance: 14.3mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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BUK6607-55C,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 420A; 158W Mounting: SMD Application: automotive industry Power dissipation: 158W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: logic level Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±15V Pulsed drain current: 420A Case: D2PAK; SOT404 Drain-source voltage: 55V Drain current: 74A On-state resistance: 14.3mΩ Type of transistor: N-MOSFET |
товар відсутній |