BUK6Y20-30PX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET P-CH 30V 41A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V
Qualification: AEC-Q101
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Технічний опис BUK6Y20-30PX Nexperia USA Inc.
Description: MOSFET P-CH 30V 41A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V, Power Dissipation (Max): 66W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції BUK6Y20-30PX
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BUK6Y20-30PX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 41A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V Power Dissipation (Max): 66W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V Qualification: AEC-Q101 |
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BUK6Y20-30PX | Виробник : Nexperia |
MOSFET BUK6Y20-30P/SOT669/LFPAK |
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