на замовлення 947 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.08 грн |
| 10+ | 192.94 грн |
| 100+ | 137.39 грн |
| 500+ | 116.91 грн |
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Технічний опис BUK753R1-40E,127 Nexperia
Description: MOSFET N-CH 40V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V, Power Dissipation (Max): 234W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK753R1-40E,127 за ціною від 131.89 грн до 131.89 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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| BUK753R1-40E,127 | Виробник : NXP |
 Description: NXP - BUK753R1-40E,127 - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 2217 шт: термін постачання 21-31 дні (днів) |
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BUK753R1-40E,127 | Виробник : NEXPERIA |
Trans MOSFET N-CH 40V 100A Automotive 3-Pin(3+Tab) TO-220AB Rail |
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| BUK753R1-40E,127 | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 798A Power dissipation: 234W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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BUK753R1-40E,127 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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| BUK753R1-40E,127 | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 798A Power dissipation: 234W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhanced Application: automotive industry |
товар відсутній |