BUK7613-60E,118 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 58A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 58A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
800+ | 58.09 грн |
1600+ | 47.46 грн |
2400+ | 45.09 грн |
Відгуки про товар
Написати відгук
Технічний опис BUK7613-60E,118 Nexperia USA Inc.
Description: NEXPERIA - BUK7613-60E,118 - Leistungs-MOSFET, n-Kanal, 60 V, 58 A, 0.00944 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 58A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 96W, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 96W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.00944ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.00944ohm, SVHC: Lead (14-Jun-2023).
Інші пропозиції BUK7613-60E,118 за ціною від 42.26 грн до 128.07 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BUK7613-60E,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 58A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3800 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BUK7613-60E,118 | Виробник : Nexperia | MOSFET BUK7613-60E/SOT404/D2PAK |
на замовлення 11671 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
BUK7613-60E,118 | Виробник : NEXPERIA |
Description: NEXPERIA - BUK7613-60E,118 - Leistungs-MOSFET, n-Kanal, 60 V, 58 A, 0.00944 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 58A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 96W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 96W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.00944ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00944ohm SVHC: Lead (14-Jun-2023) |
на замовлення 8798 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BUK7613-60E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 41A Pulsed drain current: 234A Power dissipation: 96W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 28.2mΩ Mounting: SMD Gate charge: 22.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
BUK7613-60E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 41A Pulsed drain current: 234A Power dissipation: 96W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 28.2mΩ Mounting: SMD Gate charge: 22.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |