BUK7M21-40EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 40V 33A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 593 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.94 грн |
| 10+ | 38.8 грн |
| 100+ | 26.84 грн |
| 500+ | 21.05 грн |
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Технічний опис BUK7M21-40EX Nexperia USA Inc.
Description: MOSFET N-CH 40V 33A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V, Power Dissipation (Max): 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 593 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK7M21-40EX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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BUK7M21-40EX | Виробник : Nexperia |
MOSFET 40V N-CHANNEL STD LEVEL |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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| BUK7M21-40EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 23.1A Pulsed drain current: 131A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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BUK7M21-40EX | Виробник : NEXPERIA |
Trans MOSFET N-CH 40V 33A Automotive 8-Pin LFPAK EP T/R |
товар відсутній |
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BUK7M21-40EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 33A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 593 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|
| BUK7M21-40EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 23.1A Pulsed drain current: 131A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |