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BUK7S0R9-40HJ

BUK7S0R9-40HJ Nexperia USA Inc.

BUK7S0R9-40H.pdf Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Bulk
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
151+144.44 грн
Мінімальне замовлення: 151
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Технічний опис BUK7S0R9-40HJ Nexperia USA Inc.

Description: MOSFET N-CH 40V 375A LFPAK88, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 375A (Ta), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V, Power Dissipation (Max): 375W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V, Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V.

Інші пропозиції BUK7S0R9-40HJ

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
BUK7S0R9-40HJ BUK7S0R9-40HJ Виробник : Nexperia BUK7S0R9-40H-1601401.pdf MOSFET 40V N-CHANNEL STD LEVEL
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
BUK7S0R9-40HJ BUK7S0R9-40HJ Виробник : Nexperia USA Inc. BUK7S0R9-40H.pdf Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
товар відсутній
BUK7S0R9-40HJ BUK7S0R9-40HJ Виробник : Nexperia USA Inc. BUK7S0R9-40H.pdf Description: MOSFET N-CH 40V 375A LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V
Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
товар відсутній