на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 133.19 грн |
10+ | 109.02 грн |
100+ | 75.44 грн |
250+ | 69.43 грн |
500+ | 63.36 грн |
1000+ | 54.41 грн |
3000+ | 51.67 грн |
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Технічний опис BUK7Y1R0-40NX Nexperia
Description: BUK7Y1R0-40N/SOT669/LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 320A (Ta), 262A (Tj), Rds On (Max) @ Id, Vgs: 0.97mOhm @ 25A, 10V, Power Dissipation (Max): 268W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10622 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK7Y1R0-40NX
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BUK7Y1R0-40NX | Виробник : Nexperia USA Inc. |
Description: BUK7Y1R0-40N/SOT669/LFPAK Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320A (Ta), 262A (Tj) Rds On (Max) @ Id, Vgs: 0.97mOhm @ 25A, 10V Power Dissipation (Max): 268W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10622 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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BUK7Y1R0-40NX | Виробник : Nexperia USA Inc. |
Description: BUK7Y1R0-40N/SOT669/LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320A (Ta), 262A (Tj) Rds On (Max) @ Id, Vgs: 0.97mOhm @ 25A, 10V Power Dissipation (Max): 268W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10622 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |