BUK7Y3R1-80MX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: BUK7Y3R1-80M/SOT669/LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6986 pF @ 40 V
Qualification: AEC-Q101
Description: BUK7Y3R1-80M/SOT669/LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6986 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.59 грн |
| 10+ | 98.81 грн |
| 100+ | 78.65 грн |
| 500+ | 62.45 грн |
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Технічний опис BUK7Y3R1-80MX Nexperia USA Inc.
Description: BUK7Y3R1-80M/SOT669/LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6986 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції BUK7Y3R1-80MX за ціною від 51.81 грн до 133.29 грн
| Фото | Назва | Виробник | Інформація |
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BUK7Y3R1-80MX | Виробник : Nexperia |
 MOSFET BUK7Y3R1-80M/SOT669/LFPAK |
на замовлення 1376 шт: термін постачання 21-30 дні (днів) |
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BUK7Y3R1-80MX | Виробник : Nexperia USA Inc. |
Description: BUK7Y3R1-80M/SOT669/LFPAK Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6986 pF @ 40 V Qualification: AEC-Q101 |
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