BUK7Y72-80EX Nexperia
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 15.98 грн |
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Технічний опис BUK7Y72-80EX Nexperia
Description: MOSFET N-CH 80V 16A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 5A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK7Y72-80EX за ціною від 17.21 грн до 17.21 грн
| Фото | Назва | Виробник | Інформація |
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BUK7Y72-80EX | Виробник : Nexperia |
 Trans MOSFET N-CH 80V 16A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK7Y72-80EX | Виробник : NEXPERIA |
Trans MOSFET N-CH 80V 16A Automotive 5-Pin(4+Tab) LFPAK T/R |
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| BUK7Y72-80EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 11A Pulsed drain current: 63A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 181mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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BUK7Y72-80EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 16A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V Qualification: AEC-Q101 |
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BUK7Y72-80EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 16A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V Qualification: AEC-Q101 |
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BUK7Y72-80EX | Виробник : Nexperia |
MOSFET 80V Mosfet N-Channel |
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| BUK7Y72-80EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 11A Pulsed drain current: 63A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 181mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |