BUK7Y9R9-80EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 80V 89A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 47.68 грн |
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Технічний опис BUK7Y9R9-80EX Nexperia USA Inc.
Description: MOSFET N-CH 80V 89A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q100.
Інші пропозиції BUK7Y9R9-80EX за ціною від 37.16 грн до 112.65 грн
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BUK7Y9R9-80EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 89A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V Qualification: AEC-Q100 |
на замовлення 2978 шт: термін постачання 21-31 дні (днів) |
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BUK7Y9R9-80EX | Виробник : Nexperia |
MOSFET BUK7Y9R9-80E/SOT669/LFPAK |
на замовлення 25253 шт: термін постачання 21-30 дні (днів) |
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| BUK7Y9R9-80EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 63A Pulsed drain current: 354A Power dissipation: 195W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 24.9mΩ Mounting: SMD Gate charge: 51.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7Y9R9-80EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 63A Pulsed drain current: 354A Power dissipation: 195W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 24.9mΩ Mounting: SMD Gate charge: 51.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |