на замовлення 727 шт:
термін постачання 623-632 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 230.6 грн |
| 10+ | 205.33 грн |
| 100+ | 145.61 грн |
| 500+ | 123.86 грн |
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Технічний опис BUK954R8-60E,127 Nexperia
Description: MOSFET N-CH 60V 100A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V, Power Dissipation (Max): 234W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V.
Інші пропозиції BUK954R8-60E,127
| Фото | Назва | Виробник | Інформація |
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BUK954R8-60E,127 Код товару: 158439 |
 Транзистори > Польові N-канальні |
товар відсутній
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BUK954R8-60E,127 | Виробник : NEXPERIA |
Trans MOSFET N-CH 60V 100A Automotive 3-Pin(3+Tab) TO-220AB Rail |
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BUK954R8-60E,127 | Виробник : NEXPERIA |
Description: NEXPERIA - BUK954R8-60E,127 - MOSFET MSL: MSL 1 - unbegrenzt SVHC: No SVHC (10-Jun-2022) |
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BUK954R8-60E,127 | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 60V 100A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V |
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BUK954R8-60E,127 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V |
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| BUK954R8-60E,127 | Виробник : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 590A; 234W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 590A Power dissipation: 234W Case: SOT78; TO220AB Gate-source voltage: ±10V On-state resistance: 10.8mΩ Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced Application: automotive industry |
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