BUK965R4-40E,118 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4483 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 442+ | 45.35 грн |
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Технічний опис BUK965R4-40E,118 Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V, Power Dissipation (Max): 137W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4483 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK965R4-40E,118
| Фото | Назва | Виробник | Інформація |
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BUK965R4-40E,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4483 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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BUK965R4-40E,118 | Виробник : Nexperia |
MOSFET N-channel TrenchMOS logic level FET |
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