BUK966R5-60E,118 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 4794 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 96.86 грн |
| 1600+ | 77.29 грн |
| 2400+ | 71.96 грн |
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Технічний опис BUK966R5-60E,118 Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V, Power Dissipation (Max): 182W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V.
Інші пропозиції BUK966R5-60E,118 за ціною від 59.97 грн до 163.62 грн
| Фото | Назва | Виробник | Інформація |
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BUK966R5-60E,118 | Виробник : Nexperia |
MOSFET BUK966R5-60E/SOT404/D2PAK |
на замовлення 9310 шт: термін постачання 21-30 дні (днів) |
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BUK966R5-60E,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V Power Dissipation (Max): 182W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
на замовлення 4794 шт: термін постачання 21-31 дні (днів) |
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| BUK966R5-60E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 452A; 182W Case: D2PAK; SOT404 Mounting: SMD Application: automotive industry Polarisation: unipolar Kind of package: reel; tape Gate charge: 48nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 452A Drain-source voltage: 60V Drain current: 75A On-state resistance: 14.3mΩ Type of transistor: N-MOSFET Power dissipation: 182W кількість в упаковці: 1 шт |
товар відсутній |
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| BUK966R5-60E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 452A; 182W Case: D2PAK; SOT404 Mounting: SMD Application: automotive industry Polarisation: unipolar Kind of package: reel; tape Gate charge: 48nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 452A Drain-source voltage: 60V Drain current: 75A On-state resistance: 14.3mΩ Type of transistor: N-MOSFET Power dissipation: 182W |
товар відсутній |