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BUK9E06-55B,127

BUK9E06-55B,127 NEXPERIA


4377369663644002buk9e06-55b.pdf Виробник: NEXPERIA
Trans MOSFET N-CH 55V 146A Automotive 3-Pin(3+Tab) I2PAK Rail
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Технічний опис BUK9E06-55B,127 NEXPERIA

Description: MOSFET N-CH 55V 75A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V, Power Dissipation (Max): 258W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: I2PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V, Qualification: AEC-Q101.

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BUK9E06-55B,127 BUK9E06-55B,127 Виробник : Nexperia USA Inc. BUK9E06-55B.pdf Description: MOSFET N-CH 55V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Power Dissipation (Max): 258W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: I2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
Qualification: AEC-Q101
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BUK9E06-55B,127 BUK9E06-55B,127 Виробник : Nexperia BUK9E06-55B-1598936.pdf MOSFET HIGH PERF TRENCHMOS
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