BUK9K29-100E,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET 2N-CH 100V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 58.35 грн |
| 3000+ | 53.38 грн |
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Технічний опис BUK9K29-100E,115 Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 30A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 68W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 30A, Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V, Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK9K29-100E,115 за ціною від 48.48 грн до 133.63 грн
| Фото | Назва | Виробник | Інформація |
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BUK9K29-100E,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 30A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3246 шт: термін постачання 21-31 дні (днів) |
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BUK9K29-100E,115 | Виробник : Nexperia |
MOSFET BUK9K29-100E/SOT1205/LFPAK56D |
на замовлення 8499 шт: термін постачання 21-30 дні (днів) |
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BUK9K29-100E,115 | Виробник : NEXPERIA |
Trans MOSFET N-CH 100V 30A Automotive 8-Pin LFPAK-D T/R |
товар відсутній |
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| BUK9K29-100E,115 | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 21A; Idm: 118A; 68W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Pulsed drain current: 118A Drain-source voltage: 100V Drain current: 21A On-state resistance: 80mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 68W Polarisation: unipolar Gate charge: 54nC Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 1500 шт |
товар відсутній |
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| BUK9K29-100E,115 | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 21A; Idm: 118A; 68W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Pulsed drain current: 118A Drain-source voltage: 100V Drain current: 21A On-state resistance: 80mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 68W Polarisation: unipolar Gate charge: 54nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |