BUK9K5R1-30EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1245 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.1 грн |
| 10+ | 90.18 грн |
| 100+ | 71.8 грн |
| 500+ | 57.02 грн |
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Технічний опис BUK9K5R1-30EX Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 68W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V, Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V, Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q100.
Інші пропозиції BUK9K5R1-30EX за ціною від 45.88 грн до 118.87 грн
| Фото | Назва | Виробник | Інформація |
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BUK9K5R1-30EX | Виробник : Nexperia |
MOSFET BUK9K5R1-30E/SOT1205/LFPAK56D |
на замовлення 981 шт: термін постачання 21-30 дні (днів) |
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BUK9K5R1-30EX | Виробник : NEXPERIA |
Trans MOSFET N-CH 30V 40A Automotive 8-Pin LFPAK-D T/R |
товар відсутній |
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| BUK9K5R1-30EX | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 329A; 68W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 329A Power dissipation: 68W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 10mΩ Mounting: SMD Gate charge: 26.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1500 шт |
товар відсутній |
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BUK9K5R1-30EX | Виробник : Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
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| BUK9K5R1-30EX | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 329A; 68W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 329A Power dissipation: 68W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 10mΩ Mounting: SMD Gate charge: 26.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |