BUK9K89-100E,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET 2N-CH 100V 12.5A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.5A
Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V
Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1325 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 72.94 грн |
| 10+ | 57.44 грн |
| 100+ | 44.67 грн |
| 500+ | 35.54 грн |
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Технічний опис BUK9K89-100E,115 Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 38W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 12.5A, Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V, Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK9K89-100E,115 за ціною від 26.84 грн до 75.32 грн
| Фото | Назва | Виробник | Інформація |
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BUK9K89-100E,115 | Виробник : Nexperia |
MOSFET BUK9K89-100E/SOT1205/LFPAK56D |
на замовлення 2459 шт: термін постачання 21-30 дні (днів) |
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BUK9K89-100E,115 | Виробник : NEXPERIA |
Trans MOSFET N-CH 100V 12.5A Automotive 8-Pin LFPAK-D T/R |
товар відсутній |
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| BUK9K89-100E,115 | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Pulsed drain current: 50A Drain-source voltage: 100V Drain current: 8.9A On-state resistance: 245mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 38W Polarisation: unipolar Gate charge: 16.8nC Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 1 шт |
товар відсутній |
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BUK9K89-100E,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 12.5A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.5A Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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| BUK9K89-100E,115 | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Pulsed drain current: 50A Drain-source voltage: 100V Drain current: 8.9A On-state resistance: 245mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 38W Polarisation: unipolar Gate charge: 16.8nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |