Технічний опис BY329-1200,127 NXP Semiconductors
Description: DIODE GEN PURP 1.2KV 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 135 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 150°C (Max), Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A, Current - Reverse Leakage @ Vr: 1 mA @ 1000 V.
Інші пропозиції BY329-1200,127
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BY329-1200,127 | Виробник : NXP USA Inc. |
 Description: DIODE GEN PURP 1.2KV 8A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 1000 V |
товар відсутній |
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| BY329-1200,127 | Виробник : NXP Semiconductors |
Rectifiers Diode Fast Recovery Rectifi 1.2-PinKV 8A |
товар відсутній |