DAA10EM1800PZ-TUB IXYS
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.8kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Max. forward voltage: 1.14V
Max. forward impulse current: 130A
Power dissipation: 100W
Kind of package: tube
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.8kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Max. forward voltage: 1.14V
Max. forward impulse current: 130A
Power dissipation: 100W
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис DAA10EM1800PZ-TUB IXYS
Description: DIODE AVAL 1.8KV 10A TO263HV, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Avalanche, Capacitance @ Vr, F: 4pF @ 400V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263HV, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1800 V, Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 1800 V.
Інші пропозиції DAA10EM1800PZ-TUB
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
DAA10EM1800PZ-TUB | Виробник : IXYS |
Description: DIODE AVAL 1.8KV 10A TO263HV Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Avalanche Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1800 V |
товар відсутній |
||
DAA10EM1800PZ-TUB | Виробник : IXYS | Rectifiers TO263D2 |
товар відсутній |
||
DAA10EM1800PZ-TUB | Виробник : IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.8kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Case: TO263ABHV Max. forward voltage: 1.14V Max. forward impulse current: 130A Power dissipation: 100W Kind of package: tube |
товар відсутній |