DACMH120N1200 DACO Semiconductor
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 76A; HB9434; screw; Idm: 300A
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 76A
Pulsed drain current: 300A
Power dissipation: 500W
Case: HB9434
Gate-source voltage: -10...20V
On-state resistance: 25mΩ
Semiconductor structure: transistor/transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 76A; HB9434; screw; Idm: 300A
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 76A
Pulsed drain current: 300A
Power dissipation: 500W
Case: HB9434
Gate-source voltage: -10...20V
On-state resistance: 25mΩ
Semiconductor structure: transistor/transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
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Технічний опис DACMH120N1200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 76A; HB9434; screw; Idm: 300A, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 76A, Pulsed drain current: 300A, Power dissipation: 500W, Case: HB9434, Gate-source voltage: -10...20V, On-state resistance: 25mΩ, Semiconductor structure: transistor/transistor, Operating temperature: -55...150°C, Electrical mounting: screw, Topology: MOSFET half-bridge, Mechanical mounting: screw, Type of module: MOSFET transistor, кількість в упаковці: 1 шт.
Інші пропозиції DACMH120N1200
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DACMH120N1200 | Виробник : DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 76A; HB9434; screw; Idm: 300A Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 76A Pulsed drain current: 300A Power dissipation: 500W Case: HB9434 Gate-source voltage: -10...20V On-state resistance: 25mΩ Semiconductor structure: transistor/transistor Operating temperature: -55...150°C Electrical mounting: screw Topology: MOSFET half-bridge Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |