DACMH80N1200 DACO Semiconductor
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис DACMH80N1200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A, Type of module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 50A, Case: HB9434, Topology: MOSFET half-bridge, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 34mΩ, Pulsed drain current: 250A, Power dissipation: 460W, Technology: SiC, Gate-source voltage: -10...20V, Operating temperature: -55...150°C, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції DACMH80N1200
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DACMH80N1200 | Виробник : DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 50A Case: HB9434 Topology: MOSFET half-bridge Electrical mounting: screw Polarisation: unipolar On-state resistance: 34mΩ Pulsed drain current: 250A Power dissipation: 460W Technology: SiC Gate-source voltage: -10...20V Operating temperature: -55...150°C Mechanical mounting: screw |
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