Технічний опис DD1200S33KL2CB5NOSA1 Infineon Technologies
Description: DIODE MODULE GP 3300V 1200A, Packaging: Tray, Package / Case: Block, 4 Lead, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 1200A (DC), Supplier Device Package: Module, Operating Temperature - Junction: -40°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 3300 V, Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A.
Інші пропозиції DD1200S33KL2CB5NOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DD1200S33KL2CB5NOSA1 | Виробник : Infineon Technologies |
 Description: DIODE MODULE GP 3300V 1200APackaging: Tray Package / Case: Block, 4 Lead Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1200A (DC) Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A |
товар відсутній |