DF17MR12W1M1HFB68BPSA1 Infineon Technologies

Description: LOW POWER EASY, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tj), Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V, Vgs(th) (Max) @ Id: 5.15V @ 20mA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 800 V.