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DMC2057UVT-13

DMC2057UVT-13 Diodes Inc


dmc2057uvt.pdf Виробник: Diodes Inc
Trans MOSFET N/P-CH 20V 4A/3.3A 6-Pin TSOT-26 T/R
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Технічний опис DMC2057UVT-13 Diodes Inc

Description: MOSFET N/P-CH 20V 4A/3.3A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V, Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active.

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DMC2057UVT-13 DMC2057UVT-13 Виробник : Diodes Incorporated DMC2057UVT.pdf Description: MOSFET N/P-CH 20V 4A/3.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
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DMC2057UVT-13 DMC2057UVT-13 Виробник : Diodes Incorporated DIOD_S_A0006646725_1-2542801.pdf MOSFET MOSFET BVDSS: 8V-24V
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