DMG9N65CTI

DMG9N65CTI Diodes Inc


dmg9n65cti.pdf Виробник: Diodes Inc
Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) ITO-220AB Tube
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Технічний опис DMG9N65CTI Diodes Inc

Description: MOSFET N-CH 650V 9A ITO220AB, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V, Power Dissipation (Max): 13W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: ITO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V.

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DMG9N65CTI DMG9N65CTI Виробник : Diodes Incorporated DMG9N65CTI.pdf Description: MOSFET N-CH 650V 9A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
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DMG9N65CTI Виробник : Diodes Incorporated DMG9N65CTI-247262.pdf MOSFET N-CH MOSFET 650V 9A
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