DMN21D2UFB-7B Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 760MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V
Description: MOSFET N-CH 20V 760MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V
на замовлення 593990 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10000+ | 4.78 грн |
30000+ | 4.54 грн |
50000+ | 3.86 грн |
100000+ | 3.57 грн |
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Технічний опис DMN21D2UFB-7B Diodes Incorporated
Description: MOSFET N-CH 20V 760MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 760mA (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Power Dissipation (Max): 380mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V.
Інші пропозиції DMN21D2UFB-7B за ціною від 3.92 грн до 25.96 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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DMN21D2UFB-7B | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 760MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V |
на замовлення 593990 шт: термін постачання 21-31 дні (днів) |
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DMN21D2UFB-7B | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10 |
на замовлення 135225 шт: термін постачання 21-30 дні (днів) |
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DMN21D2UFB-7B | Виробник : Diodes Inc | Trans MOSFET N-CH 20V 0.76A 3-Pin DFN T/R |
товар відсутній |
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DMN21D2UFB-7B | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: X1-DFN1006-3 Drain current: 0.7A Gate charge: 930pC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 1A Mounting: SMD On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 570mW кількість в упаковці: 10000 шт |
товар відсутній |
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DMN21D2UFB-7B | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: X1-DFN1006-3 Drain current: 0.7A Gate charge: 930pC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 1A Mounting: SMD On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 570mW |
товар відсутній |